The interaction of Cl(2P3/2) and Cl(2P1/2) with n-Si(100): Spontaneous etching

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Abstract
The sticking coefficient γ of ground-state Cl (Cl 2P3/2 ) and spin–orbit excited Cl* (Cl 2P1/2 ) on lightly doped n-Si(100) was measured using resonance-enhanced multiphoton ionization of Cl and Cl* at mTorr pressure in a Knudsen cell. For Cl only an upper limit of γ≤5×10−5 could be obtained and for Cl* γ=4.6×10−4 was measured. These γ values are temperature independent in the range of 300–600 K and the sum corresponds to a spontaneous etch rate of 9.4 Å/min for Si(100). SiCl2 was the principal etch product under these spontaneous etch conditions, and no SiCl4 was found over the given temperature range.

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