Computer-aided analysis of GaAs n-i-n structures with a heavily compensated i-layer

1 September 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 33 (9) , 1242-1250
https://doi.org/10.1109/t-ed.1986.22653

Abstract

Current-voltage characteristics and space-charge distributions in an n-i-n structure have been numerically analyzed and compared with Lampert's theory. It is found that an effective resistivity in the low-voltage region depends on acceptor and trap densities and the length of an i-layer. The analytical model has been presented to estimate the effective resistivity and the onset voltage for current rise. The back-gating effect also has been analyzed in terms of a separation distance between devices and an acceptor density. To achieve a good isolation between two devices in GaAs IC's, it is suggested that a shallow acceptor density as well as a trap density must be larger than a critical value.

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