Chemical reaction at the ZnSe/GaAs interface detected by Raman spectroscopy

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Abstract
When ZnSe is deposited at temperatures commonly used for epitaxy onto GaAs, the possibility arises that selenium or zinc reacts with the substrate and thin interfacial layers consisting of a gallium selenide or a zinc arsenide are formed. In particular, Ga2Se3, which is thermodynamically the most stable, has been suggested as a likely candidate. In this study we present evidence for the formation of Ga2Se3 using Raman spectroscopy as a fingerprint technique. Ga2Se3 layers were grown on GaAs and the Raman spectra thereof were compared with those of ZnSe/GaAs heterostructures.