320 Gbit/s error-free demultiplexing using ultrafast optical gate monolithically integrating a photodiode and electroabsorption modulator
- 21 August 2003
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 39 (17) , 1269-1270
- https://doi.org/10.1049/el:20030813
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- 160 Gbit/s error-free demultiplexing by ultrafast optical gate monolithically integrating photodiode and electroabsorption modulatorElectronics Letters, 2002
- 2.3 picoseconds optical gate monolithically integratingphotodiodeandelectroabsorption modulatorElectronics Letters, 2001
- Polarisation-insensitive travelling-wave electrodeelectroabsorption (TW-EA)modulator with bandwidth over 50 GHz and driving voltage less than 2 VElectronics Letters, 1997
- Uni-Traveling-Carrier PhotodiodesPublished by Optica Publishing Group ,1997