Effect of doping level on the gain constant and modulation bandwidth of InGaAsP semiconductor lasers
- 15 December 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (12) , 1302-1304
- https://doi.org/10.1063/1.95127
Abstract
Using the threshold carrier density measurement technique, the differential gain dg/dn at lasing threshold was measured. It was found that the differential gain dg/dn of 1.3-μm InGaAsP lasers is a strong function of the active layer doping level P0. At a doping level of 2.5×1018 cm−3, the differential gain is several times larger than at 4×1017 cm−3. A factor of 2 increase in the modulation bandwidth is demonstrated using the dg/dn dependency on P0.Keywords
This publication has 8 references indexed in Scilit:
- Measurement of radiative and nonradiative recombination rates in InGaAsP and AlGaAs light sourcesIEEE Journal of Quantum Electronics, 1984
- Temperature dependence of threshold current in III-V semiconductor lasers: Experimental prediction and explanationApplied Physics Letters, 1984
- Threshold temperature dependence of subnanosecond optically excited 1.3-μm InGaAsP lasersApplied Physics Letters, 1984
- Measurements of threshold carrier density of III-V semiconductor laser diodesApplied Physics Letters, 1983
- Direct amplitude modulation of short-cavity GaAs lasers up to X-band frequenciesApplied Physics Letters, 1983
- Calculated Auger rates and temperature dependence of threshold for semiconductor lasers emitting at 1.3 and 1.55 μmJournal of Applied Physics, 1983
- Carrier lifetime measurement for determination of recombination rates and doping levels of III-V semiconductor light sourcesApplied Physics Letters, 1982
- Magnitude of the intrinsic resonant frequency in a semiconductor laserApplied Physics Letters, 1981