1.4 ps rise-time high-voltage photoconductive switching
- 16 September 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (12) , 1455-1457
- https://doi.org/10.1063/1.105286
Abstract
We report on the generation of 825 V electrical pulses with 1.4 ps rise time and 4.0 ps duration using a pulse-biased low-temperature-grown GaAs photoconductive switch triggered by an amplified femtosecond dye laser. Dependence of the pulse shape on both electric field and optical energy is observed and discussed.Keywords
This publication has 6 references indexed in Scilit:
- High-voltage picosecond photoconductor switch based on low-temperature-grown GaAsIEEE Transactions on Electron Devices, 1990
- Electro-optic sampling of ultrashort high voltage pulsesJournal of Applied Physics, 1989
- Capacitance free generation and detection of subpicosecond electrical pulses on coplanar transmission linesIEEE Journal of Quantum Electronics, 1988
- Subpicosecond electrooptic sampling: Principles and applicationsIEEE Journal of Quantum Electronics, 1986
- Kilohertz synchronous amplification of 85-femtosecond optical pulsesJournal of the Optical Society of America B, 1985
- Generation of 85-fsec pulses by synchronous pumping of a colliding-pulse mode-locked dye laserJournal of the Optical Society of America B, 1985