I n s i t u chemical etching of GaAs(001) and InP(001) substrates by gaseous HCl prior to molecular-beam epitaxy growth
- 1 May 1987
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 5 (3) , 730-733
- https://doi.org/10.1116/1.583773
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