Local-oscillator noise in a silicon pt– n – p + microwave diode source
- 9 September 1971
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 7 (18) , 565-566
- https://doi.org/10.1049/el:19710381
Abstract
Measurements of the noise of an experimental silicon Pt–n–p+ transit-time diode used as a local oscillator at a frequency of 11.8 GHz are described. The results show that the relatively noisefree performance of the diode should make it useful, particularly for high-frequency applications where low-noise sources are not readily available.Keywords
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