Fabrication of high performance 512K static-random access memories in 0.25 μm complementary metal–oxide semiconductor technology using x-ray lithography
- 1 November 1993
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 11 (6) , 2910-2919
- https://doi.org/10.1116/1.586560
Abstract
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