Unintentional dopants incorporated in GaAs layers grown by molecular beam epitaxy

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Abstract
Motivated by the stringent material requirements that low noise FET’s place upon underlying buffer layers, the electrical properties of unintentionally doped layers of GaAs grown by MBE have been investigated. A relatively shallow acceptor (0.027 eV) with a room temperature concentration of 2×1014 cm−3 is generally characteristic of undoped material presently grown by a number of laboratories involved in MBE. During experimental investigations, undesirable system configurations leading to higher background doping levels were identified. These configurations include BeO/Ta film substrate heaters (n?6×1016 cm−3), fused quartz/Ta film substrate heaters (n?2×1015 cm−3) and hot stainless steel fixtures illuminated by the Ga oven (p?1016 cm−3).

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