Epitaxial growth of SiC using Al as an accelerator
- 1 May 1971
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 9, 309-313
- https://doi.org/10.1016/0022-0248(71)90247-8
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The Effect of Doped Aluminium on Thermal Stability of 4H- and 6H-SiCJournal of the Ceramic Association, Japan, 1970
- Hydrogen Etching of Silicon CarbideJapanese Journal of Applied Physics, 1969
- Structures et proprietes magnetiques de quelques composes de formule M Fe F3 (M Na, K, Rb, Cs, NH4, T1)Materials Research Bulletin, 1969
- Growth Studies of Silicon Carbide CrystalsJournal of the Electrochemical Society, 1966