Picosecond time-resolved study of excitons in GaAs-A1As multi-quantum-well structures
Open Access
- 15 February 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 29 (4) , 2324-2327
- https://doi.org/10.1103/physrevb.29.2324
Abstract
Energy- and time-resolved measurements of luminescence of excitons () in GaAs-A1As multi-quantum-well structures have been carried out for the first time in the picosecond time domain. Dynamical population changes of excitons are directly visualized in the energy-time coordinates. Results indicate that excitons lose their energy in the exciton band at a rate of 1.0× eV/s. This rate is much slower than the calculated kinetic-energy-loss rate and is ascribed to the random nature of the well.
Keywords
This publication has 14 references indexed in Scilit:
- Wannier exciton in quantum wellsPhysical Review B, 1983
- Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs SuperlatticesJapanese Journal of Applied Physics, 1983
- Exciton binding energy in quantum wellsPhysical Review B, 1982
- Rapid-Scan Autocorrelator for Monitoring cw Mode-Locked Dye Laser PulsesJapanese Journal of Applied Physics, 1980
- Resonant Brillouin Scattering of Excitonic Polaritons in Gallium ArsenidePhysical Review Letters, 1977
- Dependence of the direct energy gap of GaAs on hydrostatic pressurePhysical Review B, 1975
- Warm and hot carriers in silicon surface-inversion layersPhysical Review B, 1974
- Fundamental Energy Gaps of AlAs and Alp from Photoluminescence Excitation SpectraPhysical Review B, 1973
- Polariton Reflectance and Photoluminescence in High-Purity GaAsPhysical Review B, 1973
- Resolved Free-Exciton Transitions in the Optical-Absorption Spectrum of GaAsPhysical Review B, 1972