Small-junction-area GaInAs/InP pin photodiode with monolithic microlens

21 January 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (2) , 109-110
https://doi.org/10.1049/el:19880072

Abstract

We report on a back-illuminated GaInAs/InP pin photodiode with a monolithic microlens that we have fabricated. The photodiode has both an ultrabroad bandwidth of 18 GHz and a high quantum efficiency of about 84%. It achieves this by using a small pin junction area while maintaining a large fibre alignment tolerance by incorporating an InP microlens. The photodiode capacitance was 20 fF for a junction diameter of approximately 15μm.

Keywords

SMALL JUNCTION AREA PIN PHOTODIODE
SMALL PIN JUNCTION AREA
FREQUENCY RESPONSE
GAINAS-INP
INP MICROLENS
20 FF
MONOLITHIC MICROLENS
84 PERCENT
18 GHZ
HIGH QUANTUM EFFICIENCY
BACK-ILLUMINATED GAINAS/INP PIN PHOTODIODE
ULTRABROAD BANDWIDTH
LARGE FIBRE ALIGNMENT TOLERANCE
JUNCTION DIAMETER
SEMICONDUCTORS
15 MICRON
PHOTODIODE CAPACITANCE

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