Etude par photoémission de la passivation de GaAs en plasmas multipolaires d'azote et d'hydrogène
- 1 January 1987
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 22 (8) , 797-802
- https://doi.org/10.1051/rphysap:01987002208079700
Abstract
The passivation of III-V materials is a challenge to surface physicists. A passivation process by plasma cleaning and nitriding the surface has been proposed. This review of the results obtained at LEP on this subject mainly concentrates on the interaction between the hydrogen plasma or the nitrogen plasma and the surface of the sample. The multipolar plasma generates low temperature ions and a high proportion of atomic species. We are concerned with the chemical bonds as revealed by photoemission and by the electrical properties of the surface. The electrical properties are measured in situ by core level photoemission. We shall center our investigations on the existence of « elemental » arsenic and on the oxide removal on the surface.Keywords
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