Transition resistances of ohmic contacts to p-type cdte and their time-dependent variation
- 1 May 1981
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 10 (3) , 605-618
- https://doi.org/10.1007/bf02654594
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Improved ohmic properties of Au–Ge Contacts to thin n -GaAs layers alloyed with an SiO 2 overlayerElectronics Letters, 1979
- Photovoltaic properties of ZnCdS/CdTe heterojunctions prepared by spray pyrolysisJournal of Applied Physics, 1978
- Effects of heat treatment on the optical and electrical properties of indium–tin oxide filmsJournal of Applied Physics, 1978
- Photovoltaic energy conversion with n-CdS—p-CdTe heterojunctions and other II-VI junctionsIEEE Transactions on Electron Devices, 1977
- Ohmic contact and impurity conduction in P−doped CdTeJournal of Applied Physics, 1975
- Spreading Resistance Measurements on N‐Type Silicon Using Mercury ProbesJournal of the Electrochemical Society, 1975