Atomic Layer Chemical Vapor Deposition of TiO[sub 2] Low Temperature Epitaxy of Rutile and Anatase

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Abstract
This study demonstrates that atomic layer chemical vapor deposition is an excellent technique for growing epitaxial thin films at low temperatures. Using and as precursors, both the rutile and anatase phases could be deposited. Anatase is invariably obtained at lower deposition temperatures, but the temperature of the anatase/rutile phase boundary is affected by the substrate material chosen. Phase‐pure rutile was obtained down to 275°C on (0 1 2), while phase‐pure anatase was obtained up to 375°C on MgO (0 0 1). The rutile phase was found to grow epitaxially on both (0 1 2) and (0 0 1) substrates with the in‐plane orientational relationships ; and , and , respectively. The anatase phase was found to grow epitaxially on MgO (0 0 1) with the in‐plane orientational relationships and . The φ scan X‐ray diffraction measurements verified that epitaxy was still obtained at a deposition temperature of 375°C. This deposition temperature is considerable lower than those commonly applied to realize heteroepitaxy of titanium oxide films. © 2000 The Electrochemical Society. All rights reserved.

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