High-speed GaInAs/InP multiquantum well avalanche photodiodes grown by atmospheric-pressure MOCVD
- 17 March 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (6) , 313-315
- https://doi.org/10.1049/el:19880211
Abstract
We report the performance of the first high speed GaInAs/InP multi-quantum well avalanche photodiodes grown by atmospheric pressure MOCVD. The multi-quantum well avalanche region of the device consists of 50 periods of 150 Å wells and barriers forming the intrinsic region of a pin structure. Avalanche multiplication up to a factor of 25 has been measured at DC together with high-speed response giving a maximum measured RF gain of 16 and a gain-bandwidth product in excess of 25 GHz.Keywords
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