The analysis of the temperature dependence of photoconductive frequency-resolved spectroscopy in the presence of carrier trapping: Application to polycrystalline silicon
- 15 March 1993
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (6) , 2958-2964
- https://doi.org/10.1063/1.354055
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Carrier Lifetime Distributions and Recombination Kinetics in Silicon on Insulator (Simox) SubstrateMRS Proceedings, 1989
- Electronic properties of chemically deposited polycrystalline siliconJournal of Applied Physics, 1979
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952