Relative Errors of Free-Carrier Density at Different Temperatures Calculated from Approximations for the Fermi-Dirac Integral
- 1 May 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (5R)
- https://doi.org/10.1143/jjap.34.2286
Abstract
We present the relative errors of the free-carrier concentration in a semiconductor at all temperatures associated with three different approximations for the Fermi-Dirac integral of the order of 1/2. The results suggest that the errors peak at around 200 K and decrease outside this temperature range for all three doping concentrations considered (1018, 1019, and 1020cm-3).Keywords
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