Recognition of D defects in silicon single crystals by preferential etching and effect on gate oxide integrity
- 1 January 1992
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 7 (1A) , A135-A140
- https://doi.org/10.1088/0268-1242/7/1a/025
Abstract
A method for revealing point defects in silicon single crystals has been investigated. D or A defects could be revealed by a preferential etching technique using Secco's etchant. Wedge-shaped flow patterns and etch pits were recognised in the D and A regions, respectively. The flow patterns were so characteristic that the D region could be distinguished very easily.Keywords
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