Interpretation of scanning high-energy electron diffraction measurements with application to GaAs surfaces
- 1 April 1973
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (4) , 1897-1899
- https://doi.org/10.1063/1.1662472
Abstract
SHEED measurements have been made on the surface of GaAs crystals during in situ epitaxial deposition. The (bulk) spot pattern changes to a streak pattern as deposition proceeds, as noted by other workers. An interpretation of these patterns is given in terms of simple kinematic scatttering from flat surface regions. This leads to a straightforward interpretation of the observed specular reflection phenomenon, enables the area of coherent scattering to be estimated (0.16 μ2 in the present experiments), and should permit a more detailed analysis of ordered surface structures.This publication has 6 references indexed in Scilit:
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