Surface roughness effects in laser crystallized polycrystalline silicon
- 17 April 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (16) , 2060-2062
- https://doi.org/10.1063/1.113902
Abstract
Two surface roughening mechanisms have been distinguished in laser crystallized polycrystalline Si: one is related to rapid release of hydrogen from hydrogen‐rich plasma enhanced chemical vapor depositedamorphous Si and the other is independent of the hydrogen content of the material and is determined by the total number of pulses incident on the surface. At, or beyond, the melt threshold energy there is a positive feedback effect between a beam‐induced periodic surface roughnesspattern and enhancement of this pattern by interference effects in subsequent pulses.Keywords
This publication has 0 references indexed in Scilit: