Comparison of advanced plasma sources for etching applications. I. Etching rate, uniformity, and profile control in a helicon and a multiple electron cyclotron resonance source
- 1 July 1994
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 12 (4) , 2310-2321
- https://doi.org/10.1116/1.587758
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