Investigation of p-type strained-layer InxGa1−xAs/AlyGa1−yAs quantum well infrared photodetectors for long wavelength infrared imaging arrays applications
- 30 April 1996
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 19 (3) , 229-239
- https://doi.org/10.1006/spmi.1996.0026
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