The Proton‐induced kossel effect and its application to crystallographic studies

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Abstract
A survey is given of the characteristic features of the proton‐induced Kossel effect and its use for crystallographic investigations of semiconductor materials. The excitation of the characteristic X‐rays was performed with protons in the energy range 0.5–1.5 MeV. Mainly long‐wave X‐radiation was used because of the high X‐ray yields and large Bragg angles also for reflections with low indices. The use of the effect for lattice parameter determinations, the identification of polar surfaces and the detection of tetragonal distortions is described. In this connection the advantage of simultaneously recording Kossel reflection and blocking pattern is also demonstrated. The different behaviour of the observed P—Kα‐ and Ga—Kα‐reflections in response to lattice damage is pointed out.