Fabrication of Si/Al2O3/Si Silicon on Insulator Structures Grown by Ultrahigh-Vacuum CVD Method
- 1 February 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (2S)
- https://doi.org/10.1143/jjap.35.1001
Abstract
A double-heteroepitaxial Si/γ-Al2O3/Si structure was fabricated for the first time by ultrahigh-vacuum chemical vapor deposition (UHV-CVD). An epitaxial γ-Al2O3(100) layer was grown on a Si(100) substrate with Al(CH3)3 and N2O gases at substrate temperatures of 850–1000°C. Subsequently, an epitaxial Si(100) layer was also grown on a γ-Al2O3(100)/Si(100) substrate by UHV-CVD with Si2H6 gas at substrate temperatures of 750–950°C. These epitaxial layers were characterized by reflection high-energy electron diffraction (RHEED), scanning electron microscopy (SEM), Auger electron spectroscopy (AES), cross-sectional transmission electron microscopy (TEM), Hall effect measurement and ellipsometry. The reflection high-energy electron diffraction of the 5000-Å-thick silicon epitaxial layer indicated streaked 2×1 patterns. From these results, the UHV-CVD method is proven to be an effective method for Al2O3 and silicon growth at low growth temperatures, yielding uniform film thickness and good crystalline quality.Keywords
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