A high aspect-ratio 0.1 micron gate technique for low-noise MESFET'S
- 1 January 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 3 (1) , 24-26
- https://doi.org/10.1109/edl.1982.25461
Abstract
A new technique, using optical lithography, has been developed to produce very thick submicron gates. This technique has produced Al gates 900Å long and 1.7µm thick, for an aspect-ratio (gate thickness/gate length) of ∼ 19. Using this high aspect-ratio gate structure, GaAs MESFET's have been fabricated with gate lengths as short as 0.1µm and widths as wide as 300µm. Gate resistances of 17Ω/mm and 37Ω/mm of gate width have been measured for half-micron and quarter-micron long Al gates, respectively.Keywords
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