Bonding silicon wafer to silicon nitride with spin-on glass as adhesive

26 March 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (7) , 314-315
https://doi.org/10.1049/el:19870233

Abstract

Using spin-on glass (SOG) as an adhesive, an Si wafer with thermal oxide was successfully bonded to one with an RF-sputtered Si₃N₄ film. This ensures that SOG films are effective in bonding Si wafers to less reactive surfaces than Si or SiO₂ such as silicon nitride. It was also found that the previously reported bonding procedure can be simplified by suppressing the spin-induced radial striations of the SOG films.

Keywords

3D IC TECHNOLOGY
BONDING SI WAFERS
BONDING PROCEDURE
SI-SIO2 WAFER
SOG FILMS
SPIN-ON GLASS AS ADHESIVE
SI-SI3N4 WAFER
RF-SPUTTERED SI3N4 FILM

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