Free Excitons in GaN
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Internet Journal of Nitride Semiconductor Research
Abstract
Optical spectra on free exciton properties for GaN are presented and discussed, in particular the influence of epitaxial strain and temperature. The exciton-phonon coupling is also manifested via the temperature dependence of the LO phonon replicas of the free exciton.Keywords
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