Semiconducting properties of several IIIB-VB-VIB ternary materials and their metallurgical aspects
- 30 June 1966
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 9 (6) , 633-640
- https://doi.org/10.1016/0038-1101(66)90007-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Simple evaluation of the maximum thermoelectric figure of merit, with application to mixed crystals SnS1-xSexSolid-State Electronics, 1963
- Growth of Gallium Arsenide Single Crystals by Free Surface MethodJapanese Journal of Applied Physics, 1963
- Solid solutions of In2Te3 in Sb2Te3 and Bi2Te3Journal of Physics and Chemistry of Solids, 1961
- Zone Leveling and Crystal Growth of Peritectic CompoundsJournal of Applied Physics, 1961
- Device for Measurement of the Electrical Properties of Bi2Se3 at Elevated TemperaturesJournal of Applied Physics, 1960
- Measurement of Thermal Conductivity by Utilization of the Peltier EffectJournal of Applied Physics, 1959