The effect of gold doping upon the characteristics of MOS field-effect transistors with applied substrate voltage
- 1 April 1968
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 56 (4) , 774-775
- https://doi.org/10.1109/PROC.1968.6393
Abstract
From an examination of the dependence of MOS transistor threshold voltage on substrate biasing conditions, experimental evidence is presented which indicates that at least part of the shift in threshold voltage which results from gold doping can be attributed to ionized gold acceptor states near the silicon surface.Keywords
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