GaAs/ n -AlGaAs field-effect transistor withembedded InAs quantum traps and its programmable threshold characteristics
- 29 February 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (5) , 491-493
- https://doi.org/10.1049/el:19960293
Abstract
Novel GaAs/n-AlGaAs FETs have been developed by placing InAs quantum dots near the channel. The authors show that the electron concentration increases linearly with gate voltage but its threshold voltage can be programmable by trapping electrons in these dots. Analysis has shown that one electron is trapped by each InAs dot.Keywords
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