Observation of Interface Band Structure by Ballistic-Electron-Emission Microscopy

Publisher Website
Google Scholar
Abstract
A unique ballistic-electron spectroscopy technique has been employed to measure directly semiconductor-band-structure properties at a subsurface interface for the first time. Further, the method, based on scanning tunneling microscopy, enables spatially resolved carrier-transport spectroscopy of interfaces. A theoretical treatment has been developed which accurately accounts for the observed spectroscopic features.