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Monolithic Watt-Level Millimeter-Wave Barrier-Intrinsic-N+ (BIN) Diode-Grid Frequency Tripler Array
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Monolithic Watt-Level Millimeter-Wave Barrier-Intrinsic-N+ (BIN) Diode-Grid Frequency Tripler Array
Monolithic Watt-Level Millimeter-Wave Barrier-Intrinsic-N+ (BIN) Diode-Grid Frequency Tripler Array
RH
R. J. Hwu
R. J. Hwu
JL
Jr. N. C. Luhmann
Jr. N. C. Luhmann
DR
D. B. Rutledge
D. B. Rutledge
DS
D. Streit
D. Streit
TO
T. O'Neill
T. O'Neill
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18 November 1988
proceedings article
Published by
SPIE-Intl Soc Optical Eng
Vol. 1039
,
328-329
https://doi.org/10.1117/12.978472
Abstract
Thousands of barrier-Intrinsic-N+ diodes are monolithically integrated by a metal grid as a highly efficient frequency tripler which promises watt-level CW output power throughout the millimeter wave region.© (1988) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Keywords
DIODES
EXTREMELY HIGH FREQUENCY
METALS
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