The determination of sulfur-ion-implantation profiles in GaAs using Auger electron spectroscopy
- 1 February 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (2) , 809-812
- https://doi.org/10.1063/1.326048
Abstract
Profiles of S+ and S+2 ions implanted at 60 and 120 keV were studied using Auger electron spectroscopy. The maximum sulfur concentration of unannealed samples was found to be 86 nm below the GaAs surface for the 120‐keV S+ with a total dose of 2×1016 cm−2, whereas it was 40 nm for the 120‐keV S+2 with a dose of 1016 cm−2. These depths compare favorably with the calculated LSS ranges of 89 and 45 nm, respectively. Outdiffusion of sulfur has been observed in sulfur‐implanted Cr‐doped GaAs following annealing. The absolute sulfur concentrations were obtained by comparing the relative heights of Auger peaks between the implanted sulfur and the sulfur in ZnS and CdS crystals. Limits of detectability for the implanted sulfur were measured to be ∼1019 cm−3.This publication has 4 references indexed in Scilit:
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