Radio-Frequency-Sputtered Films of β-Tungsten Structure Compounds
- 1 November 1970
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (12) , 4958-4962
- https://doi.org/10.1063/1.1658570
Abstract
Radio‐frequency sputtering has been used to depositfilms of intermetallic binary systems (AxBy ) in which the composition varies continuously from about 10 at.% to 80 at.% for the B constituent. Within this composition range the following β‐tungsten structured compounds were obtained: V3Si, Nb3Sn, Nb3Pt, Nb3Au, Nb3Al, Nb3Ge, and Ta3Ge. For films with thickness ranging from 3000 to 10 000 Å values of Tc were observed which were within 1°K of previously reported best bulk values. In the case of Ta3Ge a new β‐W superconductor has been found with a Tc of about 8°K.This publication has 7 references indexed in Scilit:
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