On the robustness of LDD nMOS transistors subjected to measurement of drain breakdown voltage

This publication has 4 references indexed in Scilit:

• A simple technique to induce and control short pulses of deep drain-source breakdown conditions
  IEEE Electron Device Letters, 1989
• Subbreakdown drain leakage current in MOSFET
  IEEE Electron Device Letters, 1987
• MOSFET drain breakdown voltage
  IEEE Electron Device Letters, 1986
• A numerical model of avalanche breakdown in MOSFET's
  IEEE Transactions on Electron Devices, 1978