Physical models for strained and relaxed GaInAs alloys: Band structure and low-field transport
- 1 August 1997
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (8) , 1139-1152
- https://doi.org/10.1016/s0038-1101(97)00051-8
Abstract
No abstract availableKeywords
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