Polarisation insensitivephotodetector characteristicsof a tensile strained barrier laser diode
- 3 February 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (3) , 230-232
- https://doi.org/10.1049/el:19940192
Abstract
A novel approach for realising polarisation insensitive photodetectors in a laser diode is proposed and demonstrated using a tensile strained barrier multiquantum well active layer. The polarisation dependency of the sensitivity is suppressed by 0.5 dB. A flat response is obtained in the 1.5 µm wavelength region from 1.48 to 1.58 µm.Keywords
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