Low-threshold stripe geometry lasers by metalorganic chemical vapour deposition (MO-CVD)
- 17 September 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (19) , 714-715
- https://doi.org/10.1049/el:19810501
Abstract
We report low-threshold MO-CVD-grown GaAlAs DH (8260 Å) lasers with shallow proton implantation delineated stripe widths of 4, 6 and 8 mm. At room temperature, a 125 μm device with a 6 μm stripe exhibited a 31 mA threshold and operated kink-free up to 15 mW/facet with a differential efficiency of 76%.Keywords
This publication has 1 reference indexed in Scilit:
- Ga1-xAlxAs-GaAs Heterostructure Lasers Grown by Metalorganic Chemical Vapor DepositionPublished by Japan Society of Applied Physics ,1979