Defect Generation During Epitaxial Growth of CoSi2 on Miniature Sized (100) Si Substrate and its Effect on Electrical Properties
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Epitaxial growth of CoSi2 layer on (100)Si and facet formation at the CoSi2/Si interfaceJournal of Applied Physics, 1995
- Interfacial and surface energetics of CoSi2Journal of Applied Physics, 1994
- Epitaxial CoSi2 films on Si(100) by solid-phase reactionJournal of Applied Physics, 1994
- Formation of epitaxial CoSi2 films on (001) silicon using Ti-Co alloy and bimetal source materialsJournal of Applied Physics, 1991
- Growth of epitaxial CoSi2 on (100)SiApplied Physics Letters, 1991