Behavior of trench surface by H2 annealing for reliable trench gate oxide
- 1 July 2003
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 255 (1-2) , 123-129
- https://doi.org/10.1016/s0022-0248(03)01238-7
Abstract
No abstract availableKeywords
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