Grain Size Effect of CuFeTe2 Response to Oxygen
- 1 May 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (5A) , L674-675
- https://doi.org/10.1143/jjap.32.l674
Abstract
The electrical resistivity of the layered semiconductor CuFeTe2 is created in response to oxygen concentration intercalated into the van der Waals gaps. An oxygen gas sensor operating around room temperature has been fabricated using this property. The resistivity response to oxygen has been improved by the use of crystal grains of uniform size. The specimen consisting of grains with diameters of 20∼53 µm responds to 20% oxygen mixed into nitrogen in 2 min.Keywords
This publication has 2 references indexed in Scilit:
- Oxygen Gas Response of Layered Compound CuFeTe2Japanese Journal of Applied Physics, 1990
- Gas-polarographic multifunctional sensor: oxygen-humidity sensorSensors and Actuators, 1989