ANODIC OXIDE FILMS ON INDIUM ANTIMONIDE

Abstract
The kinetics of formation of anodic oxide films on different crystal faces of single crystal indium antimonide have been investigated by measurements of charge passed, capacitance, and optical properties. Below a transition or breakdown region of voltage no difference in kinetics was found. Above this voltage a marked difference appeared. The transition voltage was found to depend on both the crystal face and the current density at which the film was formed.

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