Integration of detectors with GaInAsP/InP carrier depletion optical switches
- 11 October 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (21) , 1783-1784
- https://doi.org/10.1049/el:19901144
Abstract
An optical switch made of carrier depletion directional couplers based on GaInAsP/InP double-heterostructure waveguides with integrated detectors was realised. The device was fabricated using a two step Cl-VPE epitaxy and shows good performances both in terms of switching (phase modulation efficiency ñ 12°/V/mm) and detecting properties (detector leakage current ñ 1 nA at −5 V).Keywords
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