A comment on 'Magnetotransport properties of Hg1-xCdxTe in high magnetic fields'
- 30 March 1987
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 20 (9) , L133-L135
- https://doi.org/10.1088/0022-3719/20/9/006
Abstract
An incorrect approximation urges Gebhardt et al. to comment on the published paper 'Magnetotransport properties of Hg1-xCdxTe in high magnetic fields' by De Vos et al. (see ibid., vol.19 p.2509 (1986)). For x=0.2, i.e. for semiconductor material, De Vos et al. interpret their results for the Hall coefficient as being due to 'magnetic freeze-out' of free carriers. However, there is no evidence for freeze-out in the samples investigated by De Vos et al. Gebhardt et. al. prove that the evaluation of the carrier density from the Hall effect data and the conclusions are incorrect.Keywords
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