Integrated injection logic for a linear/digital LSI environment

1 March 1978

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 25 (3) , 351-357
https://doi.org/10.1109/t-ed.1978.19080

Abstract

The dc and transient performance of Integrated Injection Logic (I²L) structures in a linear/digital LSI environment is analyzed and modeled. The analysis is based on a functional modeling approach and uses a one-dimensional regional computer device analysis program which includes heavy doping effects and doping level mobility dependence. The computed results are used to evaluate the performance of I²L structures in five bioplar technologies. Means of decreasing the effective epitaxial layer thickness and decreasing the effective epi-resistivities of the I²L part of the chip, without affecting the breakdown voltage of the linear part, are given and evaluated. The computed results are compared to experiments.

Keywords

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