Fabrication of monolithic twin-GaInAs pin photodiode for balanced dual-detector optical coherent receivers

28 April 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (9) , 514-516
https://doi.org/10.1049/el:19880348

Abstract

A monolithic twin-GaInAs/InP pin photodiode with planar, embedded structure has been fabricated for optical coherent receiver applications. High-uniformity (±1.5%) quantum efficiency and low capacitance (0.3 pF) have been achieved, and its advantage has been demonstrated by the intensity noise suppressions of a dual-detector balanced heterodyne receiver (better than −15 dB up to 4.2 GHz).

Keywords

INTENSITY NOISE SUPPRESSIONS
GAINAS-INP MONOLITHIC TWIN PHOTODIODE
4.2 GHZ
QUANTUM EFFICIENCY
LOW CAPACITANCE
BALANCED DUAL-DETECTOR OPTICAL COHERENT RECEIVERS
0.3 PF
PIN PHOTODIODE
PLANAR EMBEDDED STRUCTURE
DUAL-DETECTOR BALANCED HETERODYNE RECEIVER

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