FIELD-ASSISTED REEMISSION OF CHARGE CARRIERS FROM SHALLOW IMPURITY CENTERS IN GERMANIUM
- 1 November 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (9) , 362-364
- https://doi.org/10.1063/1.1653435
Abstract
Field‐assisted reemission has been observed at low temperatures for charge carriers captured by shallow ionized donor and acceptor states in germanium. The observed behavior is well explained by the three‐dimensional Poole‐Frenkel theory at moderate field strength (400–1000 V cm−1); at higher fields, other effects dominate the reemission process.Keywords
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