Gated negative-effective-mass ballistic terahertz generators
- 11 October 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (15) , 2292-2294
- https://doi.org/10.1063/1.124994
Abstract
We consider gate control of terahertz generation in planar ballistic diodes with a negative-effective-mass section in a dispersion relation of current carriers in a current-conducting channel. Such a generation in ballistic p+pp+ or n+nn+ diodes occurs as a result of plasma instability development and self-organization of a regular oscillation regime. Conditions of existence and oscillation frequencies are calculated. The gate can also serve as an oscillation-collecting electrode. We consider double-gate designs, side by side with conventional single-gate designs. The double-gate devices allow us to separate circuits for direct and high-frequency currents.Keywords
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